MJE15035G
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onsemi MJE15035G

Manufacturer No:
MJE15035G
Manufacturer:
onsemi
Package:
Tube
Datasheet:
MJE15035G Datasheet
ECAD Model:
-
Description:
TRANS PNP 350V 4A TO220
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

Transistor Type:PNP
Current - Collector (Ic) (Max):4 A
Voltage - Collector Emitter Breakdown (Max):350 V
Vce Saturation (Max) @ Ib, Ic:500mV @ 100mA, 1A
Current - Collector Cutoff (Max):10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:10 @ 2A, 5V
Power - Max:2 W
Frequency - Transition:30MHz
Operating Temperature:-65°C ~ 150°C (TJ)
Mounting Type:Through Hole
Package / Case:TO-220-3
Supplier Device Package:TO-220
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Similar Products

Part Number MJE15035G MJE15030G   MJE15031G   MJE15032G   MJE15033G   MJE15034G   MJE15035  
Manufacturer onsemi onsemi onsemi onsemi onsemi onsemi onsemi
Product Status Active Active Active Active Active Active Obsolete
Transistor Type PNP NPN PNP NPN PNP NPN PNP
Current - Collector (Ic) (Max) 4 A 8 A 8 A 8 A 8 A 4 A 4 A
Voltage - Collector Emitter Breakdown (Max) 350 V 150 V 150 V 250 V 250 V 350 V 350 V
Vce Saturation (Max) @ Ib, Ic 500mV @ 100mA, 1A 500mV @ 100mA, 1A 500mV @ 100mA, 1A 500mV @ 100mA, 1A 500mV @ 100mA, 1A 500mV @ 100mA, 1A 500mV @ 100mA, 1A
Current - Collector Cutoff (Max) 10µA (ICBO) 100µA 100µA 10µA (ICBO) 10µA (ICBO) 10µA (ICBO) 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 10 @ 2A, 5V 20 @ 4A, 2V 20 @ 4A, 2V 10 @ 2A, 5V 10 @ 2A, 5V 10 @ 2A, 5V 10 @ 2A, 5V
Power - Max 2 W 50 W 50 W 50 W 50 W 2 W 2 W
Frequency - Transition 30MHz 30MHz 30MHz 30MHz 30MHz 30MHz 30MHz
Operating Temperature -65°C ~ 150°C (TJ) -65°C ~ 150°C (TJ) -65°C ~ 150°C (TJ) -65°C ~ 150°C (TJ) -65°C ~ 150°C (TJ) -65°C ~ 150°C (TJ) -65°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole
Package / Case TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3
Supplier Device Package TO-220 TO-220 TO-220 TO-220 TO-220 TO-220 TO-220

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