MJE15035
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onsemi MJE15035

Manufacturer No:
MJE15035
Manufacturer:
onsemi
Package:
Tube
Datasheet:
MJE15035 Datasheet
ECAD Model:
-
Description:
TRANS PNP 350V 4A TO220
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

Transistor Type:PNP
Current - Collector (Ic) (Max):4 A
Voltage - Collector Emitter Breakdown (Max):350 V
Vce Saturation (Max) @ Ib, Ic:500mV @ 100mA, 1A
Current - Collector Cutoff (Max):10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:10 @ 2A, 5V
Power - Max:2 W
Frequency - Transition:30MHz
Operating Temperature:-65°C ~ 150°C (TJ)
Mounting Type:Through Hole
Package / Case:TO-220-3
Supplier Device Package:TO-220
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Similar Products

Part Number MJE15035 MJE15035G   MJE15030   MJE15031   MJE15032   MJE15033   MJE15034  
Manufacturer onsemi onsemi NTE Electronics, Inc NTE Electronics, Inc onsemi onsemi onsemi
Product Status Obsolete Active Active Active Obsolete Obsolete Obsolete
Transistor Type PNP PNP NPN PNP NPN PNP NPN
Current - Collector (Ic) (Max) 4 A 4 A 8 A 8 A 8 A 8 A 4 A
Voltage - Collector Emitter Breakdown (Max) 350 V 350 V 150 V 150 V 250 V 250 V 350 V
Vce Saturation (Max) @ Ib, Ic 500mV @ 100mA, 1A 500mV @ 100mA, 1A 500mV @ 100mA, 1A 500mV @ 100mA, 1A 500mV @ 100mA, 1A 500mV @ 100mA, 1A 500mV @ 100mA, 1A
Current - Collector Cutoff (Max) 10µA (ICBO) 10µA (ICBO) 100µA 100µA 10µA (ICBO) 10µA (ICBO) 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 10 @ 2A, 5V 10 @ 2A, 5V 20 @ 4A, 2V 20 @ 4A, 2V 10 @ 2A, 5V 10 @ 2A, 5V 10 @ 2A, 5V
Power - Max 2 W 2 W 50 W 50 W 50 W 50 W 2 W
Frequency - Transition 30MHz 30MHz 30MHz 30MHz 30MHz 30MHz 30MHz
Operating Temperature -65°C ~ 150°C (TJ) -65°C ~ 150°C (TJ) -65°C ~ 150°C (TJ) -65°C ~ 150°C (TJ) -65°C ~ 150°C (TJ) -65°C ~ 150°C (TJ) -65°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole
Package / Case TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3
Supplier Device Package TO-220 TO-220 TO-220 TO-220 TO-220 TO-220 TO-220

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