onsemi-MJE15032G - Transistors - Bipolar (BJT) - Single Product Specifications and Latest Quotes

Part Number	MJE15032G	MJE15034G	MJE15033G	MJE15035G	MJE15030G	MJE15031G	MJE15032
Manufacturer	onsemi	onsemi	onsemi	onsemi	onsemi	onsemi	onsemi
Product Status	Active	Active	Active	Active	Active	Active	Obsolete
Transistor Type	NPN	NPN	PNP	PNP	NPN	PNP	NPN
Current - Collector (Ic) (Max)	8 A	4 A	8 A	4 A	8 A	8 A	8 A
Voltage - Collector Emitter Breakdown (Max)	250 V	350 V	250 V	350 V	150 V	150 V	250 V
Vce Saturation (Max) @ Ib, Ic	500mV @ 100mA, 1A	500mV @ 100mA, 1A	500mV @ 100mA, 1A	500mV @ 100mA, 1A	500mV @ 100mA, 1A	500mV @ 100mA, 1A	500mV @ 100mA, 1A
Current - Collector Cutoff (Max)	10µA (ICBO)	10µA (ICBO)	10µA (ICBO)	10µA (ICBO)	100µA	100µA	10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce	10 @ 2A, 5V	10 @ 2A, 5V	10 @ 2A, 5V	10 @ 2A, 5V	20 @ 4A, 2V	20 @ 4A, 2V	10 @ 2A, 5V
Power - Max	50 W	2 W	50 W	2 W	50 W	50 W	50 W
Frequency - Transition	30MHz	30MHz	30MHz	30MHz	30MHz	30MHz	30MHz
Operating Temperature	-65°C ~ 150°C (TJ)	-65°C ~ 150°C (TJ)	-65°C ~ 150°C (TJ)	-65°C ~ 150°C (TJ)	-65°C ~ 150°C (TJ)	-65°C ~ 150°C (TJ)	-65°C ~ 150°C (TJ)
Mounting Type	Through Hole	Through Hole	Through Hole	Through Hole	Through Hole	Through Hole	Through Hole
Package / Case	TO-220-3	TO-220-3	TO-220-3	TO-220-3	TO-220-3	TO-220-3	TO-220-3
Supplier Device Package	TO-220	TO-220	TO-220	TO-220	TO-220	TO-220	TO-220

onsemi MJE15032G

Transistor Type:	NPN
Current - Collector (Ic) (Max):	8 A
Voltage - Collector Emitter Breakdown (Max):	250 V
Vce Saturation (Max) @ Ib, Ic:	500mV @ 100mA, 1A
Current - Collector Cutoff (Max):	10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:	10 @ 2A, 5V
Power - Max:	50 W
Frequency - Transition:	30MHz
Operating Temperature:	-65°C ~ 150°C (TJ)
Mounting Type:	Through Hole
Package / Case:	TO-220-3
Supplier Device Package:	TO-220