MJE15032
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onsemi MJE15032

Manufacturer No:
MJE15032
Manufacturer:
onsemi
Package:
Tube
Datasheet:
MJE15032 Datasheet
ECAD Model:
-
Description:
TRANS NPN 250V 8A TO220
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

Transistor Type:NPN
Current - Collector (Ic) (Max):8 A
Voltage - Collector Emitter Breakdown (Max):250 V
Vce Saturation (Max) @ Ib, Ic:500mV @ 100mA, 1A
Current - Collector Cutoff (Max):10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:10 @ 2A, 5V
Power - Max:50 W
Frequency - Transition:30MHz
Operating Temperature:-65°C ~ 150°C (TJ)
Mounting Type:Through Hole
Package / Case:TO-220-3
Supplier Device Package:TO-220
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Similar Products

Part Number MJE15032 MJE15032G   MJE15033   MJE15034   MJE15035   MJE15030   MJE15031  
Manufacturer onsemi onsemi onsemi onsemi onsemi NTE Electronics, Inc NTE Electronics, Inc
Product Status Obsolete Active Obsolete Obsolete Obsolete Active Active
Transistor Type NPN NPN PNP NPN PNP NPN PNP
Current - Collector (Ic) (Max) 8 A 8 A 8 A 4 A 4 A 8 A 8 A
Voltage - Collector Emitter Breakdown (Max) 250 V 250 V 250 V 350 V 350 V 150 V 150 V
Vce Saturation (Max) @ Ib, Ic 500mV @ 100mA, 1A 500mV @ 100mA, 1A 500mV @ 100mA, 1A 500mV @ 100mA, 1A 500mV @ 100mA, 1A 500mV @ 100mA, 1A 500mV @ 100mA, 1A
Current - Collector Cutoff (Max) 10µA (ICBO) 10µA (ICBO) 10µA (ICBO) 10µA (ICBO) 10µA (ICBO) 100µA 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce 10 @ 2A, 5V 10 @ 2A, 5V 10 @ 2A, 5V 10 @ 2A, 5V 10 @ 2A, 5V 20 @ 4A, 2V 20 @ 4A, 2V
Power - Max 50 W 50 W 50 W 2 W 2 W 50 W 50 W
Frequency - Transition 30MHz 30MHz 30MHz 30MHz 30MHz 30MHz 30MHz
Operating Temperature -65°C ~ 150°C (TJ) -65°C ~ 150°C (TJ) -65°C ~ 150°C (TJ) -65°C ~ 150°C (TJ) -65°C ~ 150°C (TJ) -65°C ~ 150°C (TJ) -65°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole
Package / Case TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3
Supplier Device Package TO-220 TO-220 TO-220 TO-220 TO-220 TO-220 TO-220

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