MJE15031G
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onsemi MJE15031G

Manufacturer No:
MJE15031G
Manufacturer:
onsemi
Package:
Bulk
Datasheet:
MJE15031G Datasheet
ECAD Model:
-
Description:
TRANS PNP 150V 8A TO220
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

Transistor Type:PNP
Current - Collector (Ic) (Max):8 A
Voltage - Collector Emitter Breakdown (Max):150 V
Vce Saturation (Max) @ Ib, Ic:500mV @ 100mA, 1A
Current - Collector Cutoff (Max):100µA
DC Current Gain (hFE) (Min) @ Ic, Vce:20 @ 4A, 2V
Power - Max:50 W
Frequency - Transition:30MHz
Operating Temperature:-65°C ~ 150°C (TJ)
Mounting Type:Through Hole
Package / Case:TO-220-3
Supplier Device Package:TO-220
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Similar Products

Part Number MJE15031G MJE15034G   MJE15033G   MJE15035G   MJE15032G   MJE15030G   MJE15031  
Manufacturer onsemi onsemi onsemi onsemi onsemi onsemi NTE Electronics, Inc
Product Status Active Active Active Active Active Active Active
Transistor Type PNP NPN PNP PNP NPN NPN PNP
Current - Collector (Ic) (Max) 8 A 4 A 8 A 4 A 8 A 8 A 8 A
Voltage - Collector Emitter Breakdown (Max) 150 V 350 V 250 V 350 V 250 V 150 V 150 V
Vce Saturation (Max) @ Ib, Ic 500mV @ 100mA, 1A 500mV @ 100mA, 1A 500mV @ 100mA, 1A 500mV @ 100mA, 1A 500mV @ 100mA, 1A 500mV @ 100mA, 1A 500mV @ 100mA, 1A
Current - Collector Cutoff (Max) 100µA 10µA (ICBO) 10µA (ICBO) 10µA (ICBO) 10µA (ICBO) 100µA 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce 20 @ 4A, 2V 10 @ 2A, 5V 10 @ 2A, 5V 10 @ 2A, 5V 10 @ 2A, 5V 20 @ 4A, 2V 20 @ 4A, 2V
Power - Max 50 W 2 W 50 W 2 W 50 W 50 W 50 W
Frequency - Transition 30MHz 30MHz 30MHz 30MHz 30MHz 30MHz 30MHz
Operating Temperature -65°C ~ 150°C (TJ) -65°C ~ 150°C (TJ) -65°C ~ 150°C (TJ) -65°C ~ 150°C (TJ) -65°C ~ 150°C (TJ) -65°C ~ 150°C (TJ) -65°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole
Package / Case TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3
Supplier Device Package TO-220 TO-220 TO-220 TO-220 TO-220 TO-220 TO-220

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