onsemi-MJE15030G - Transistors - Bipolar (BJT) - Single Product Specifications and Latest Quotes

Part Number	MJE15030G	MJE15034G	MJE15031G	MJE15033G	MJE15035G	MJE15032G	MJE15030
Manufacturer	onsemi	onsemi	onsemi	onsemi	onsemi	onsemi	NTE Electronics, Inc
Product Status	Active	Active	Active	Active	Active	Active	Active
Transistor Type	NPN	NPN	PNP	PNP	PNP	NPN	NPN
Current - Collector (Ic) (Max)	8 A	4 A	8 A	8 A	4 A	8 A	8 A
Voltage - Collector Emitter Breakdown (Max)	150 V	350 V	150 V	250 V	350 V	250 V	150 V
Vce Saturation (Max) @ Ib, Ic	500mV @ 100mA, 1A	500mV @ 100mA, 1A	500mV @ 100mA, 1A	500mV @ 100mA, 1A	500mV @ 100mA, 1A	500mV @ 100mA, 1A	500mV @ 100mA, 1A
Current - Collector Cutoff (Max)	100µA	10µA (ICBO)	100µA	10µA (ICBO)	10µA (ICBO)	10µA (ICBO)	100µA
DC Current Gain (hFE) (Min) @ Ic, Vce	20 @ 4A, 2V	10 @ 2A, 5V	20 @ 4A, 2V	10 @ 2A, 5V	10 @ 2A, 5V	10 @ 2A, 5V	20 @ 4A, 2V
Power - Max	50 W	2 W	50 W	50 W	2 W	50 W	50 W
Frequency - Transition	30MHz	30MHz	30MHz	30MHz	30MHz	30MHz	30MHz
Operating Temperature	-65°C ~ 150°C (TJ)	-65°C ~ 150°C (TJ)	-65°C ~ 150°C (TJ)	-65°C ~ 150°C (TJ)	-65°C ~ 150°C (TJ)	-65°C ~ 150°C (TJ)	-65°C ~ 150°C (TJ)
Mounting Type	Through Hole	Through Hole	Through Hole	Through Hole	Through Hole	Through Hole	Through Hole
Package / Case	TO-220-3	TO-220-3	TO-220-3	TO-220-3	TO-220-3	TO-220-3	TO-220-3
Supplier Device Package	TO-220	TO-220	TO-220	TO-220	TO-220	TO-220	TO-220

onsemi MJE15030G

Transistor Type:	NPN
Current - Collector (Ic) (Max):	8 A
Voltage - Collector Emitter Breakdown (Max):	150 V
Vce Saturation (Max) @ Ib, Ic:	500mV @ 100mA, 1A
Current - Collector Cutoff (Max):	100µA
DC Current Gain (hFE) (Min) @ Ic, Vce:	20 @ 4A, 2V
Power - Max:	50 W
Frequency - Transition:	30MHz
Operating Temperature:	-65°C ~ 150°C (TJ)
Mounting Type:	Through Hole
Package / Case:	TO-220-3
Supplier Device Package:	TO-220