onsemi-MJE15029G - Transistors - Bipolar (BJT) - Single Product Specifications and Latest Quotes

Part Number	MJE15029G	MJE15028G	MJE15029
Manufacturer	onsemi	onsemi	onsemi
Product Status	Active	Active	Obsolete
Transistor Type	PNP	NPN	PNP
Current - Collector (Ic) (Max)	8 A	8 A	8 A
Voltage - Collector Emitter Breakdown (Max)	120 V	120 V	120 V
Vce Saturation (Max) @ Ib, Ic	500mV @ 100mA, 1A	500mV @ 100mA, 1A	500mV @ 100mA, 1A
Current - Collector Cutoff (Max)	100µA	100µA	100µA
DC Current Gain (hFE) (Min) @ Ic, Vce	20 @ 4A, 2V	20 @ 4A, 2V	20 @ 4A, 2V
Power - Max	50 W	50 W	50 W
Frequency - Transition	30MHz	30MHz	30MHz
Operating Temperature	-65°C ~ 150°C (TJ)	-65°C ~ 150°C (TJ)	-65°C ~ 150°C (TJ)
Mounting Type	Through Hole	Through Hole	Through Hole
Package / Case	TO-220-3	TO-220-3	TO-220-3
Supplier Device Package	TO-220	TO-220	TO-220

onsemi MJE15029G

Transistor Type:	PNP
Current - Collector (Ic) (Max):	8 A
Voltage - Collector Emitter Breakdown (Max):	120 V
Vce Saturation (Max) @ Ib, Ic:	500mV @ 100mA, 1A
Current - Collector Cutoff (Max):	100µA
DC Current Gain (hFE) (Min) @ Ic, Vce:	20 @ 4A, 2V
Power - Max:	50 W
Frequency - Transition:	30MHz
Operating Temperature:	-65°C ~ 150°C (TJ)
Mounting Type:	Through Hole
Package / Case:	TO-220-3
Supplier Device Package:	TO-220