onsemi-MJE13009 - Transistors - Bipolar (BJT) - Single Product Specifications and Latest Quotes

Part Number	MJE13009	MJE13009G	MJE13003	MJE13005	MJE13006	MJE13007
Manufacturer	onsemi	onsemi	onsemi	NTE Electronics, Inc	NTE Electronics, Inc	NTE Electronics, Inc
Product Status	Obsolete	Obsolete	Obsolete	Active	Active	Active
Transistor Type	NPN	NPN	NPN	NPN	NPN	NPN
Current - Collector (Ic) (Max)	12 A	12 A	1.5 A	4 A	8 A	8 A
Voltage - Collector Emitter Breakdown (Max)	400 V	400 V	400 V	400 V	300 V	400 V
Vce Saturation (Max) @ Ib, Ic	3V @ 3A, 12A	3V @ 3A, 12A	3V @ 500mA, 1.5A	1V @ 1A, 4A	3V @ 2A, 8A	3V @ 2A, 8A
Current - Collector Cutoff (Max)	-	-	-	-	1mA	100µA
DC Current Gain (hFE) (Min) @ Ic, Vce	8 @ 5A, 5V	8 @ 5A, 5V	8 @ 500mA, 2V	8 @ 2A, 5V	8 @ 2A, 5V	5 @ 5A, 5V
Power - Max	2 W	2 W	1.4 W	2 W	80 W	80 W
Frequency - Transition	4MHz	4MHz	10MHz	4MHz	4MHz	14MHz
Operating Temperature	-65°C ~ 150°C (TJ)	-65°C ~ 150°C (TJ)	-65°C ~ 150°C (TJ)	-65°C ~ 150°C (TJ)	-65°C ~ 150°C (TJ)	-65°C ~ 150°C (TJ)
Mounting Type	Through Hole	Through Hole	Through Hole	Through Hole	Through Hole	Through Hole
Package / Case	TO-220-3	TO-220-3	TO-225AA, TO-126-3	TO-220-3	TO-220-3	TO-220-3
Supplier Device Package	TO-220	TO-220	TO-126	TO-220	TO-220	TO-220

Transistor Type:	NPN
Current - Collector (Ic) (Max):	12 A
Voltage - Collector Emitter Breakdown (Max):	400 V
Vce Saturation (Max) @ Ib, Ic:	3V @ 3A, 12A
Current - Collector Cutoff (Max):	-
DC Current Gain (hFE) (Min) @ Ic, Vce:	8 @ 5A, 5V
Power - Max:	2 W
Frequency - Transition:	4MHz
Operating Temperature:	-65°C ~ 150°C (TJ)
Mounting Type:	Through Hole
Package / Case:	TO-220-3
Supplier Device Package:	TO-220

onsemi MJE13009