onsemi-MJD45H11-1G - Transistors - Bipolar (BJT) - Single Product Specifications and Latest Quotes

Part Number	MJD45H11-1G	MJD44H11-1G
Manufacturer	onsemi	onsemi
Product Status	Active	Active
Transistor Type	PNP	NPN
Current - Collector (Ic) (Max)	8 A	8 A
Voltage - Collector Emitter Breakdown (Max)	80 V	80 V
Vce Saturation (Max) @ Ib, Ic	1V @ 400mA, 8A	1V @ 400mA, 8A
Current - Collector Cutoff (Max)	1µA	1µA
DC Current Gain (hFE) (Min) @ Ic, Vce	40 @ 4A, 1V	40 @ 4A, 1V
Power - Max	1.75 W	1.75 W
Frequency - Transition	90MHz	85MHz
Operating Temperature	-55°C ~ 150°C (TJ)	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole	Through Hole
Package / Case	TO-251-3 Short Leads, IPak, TO-251AA	TO-251-3 Short Leads, IPak, TO-251AA
Supplier Device Package	I-PAK	I-PAK

onsemi MJD45H11-1G

Transistor Type:	PNP
Current - Collector (Ic) (Max):	8 A
Voltage - Collector Emitter Breakdown (Max):	80 V
Vce Saturation (Max) @ Ib, Ic:	1V @ 400mA, 8A
Current - Collector Cutoff (Max):	1µA
DC Current Gain (hFE) (Min) @ Ic, Vce:	40 @ 4A, 1V
Power - Max:	1.75 W
Frequency - Transition:	90MHz
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Through Hole
Package / Case:	TO-251-3 Short Leads, IPak, TO-251AA
Supplier Device Package:	I-PAK