onsemi-MJD44H11TM-ON - Transistors - Bipolar (BJT) - Single Product Specifications and Latest Quotes

Transistor Type:	NPN
Current - Collector (Ic) (Max):	8 A
Voltage - Collector Emitter Breakdown (Max):	80 V
Vce Saturation (Max) @ Ib, Ic:	1V @ 400mA, 8A
Current - Collector Cutoff (Max):	10µA
DC Current Gain (hFE) (Min) @ Ic, Vce:	60 @ 2A, 1V
Power - Max:	1.75 W
Frequency - Transition:	50MHz
Operating Temperature:	150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package:	TO-252-3 (DPAK)

onsemi MJD44H11TM-ON