MJD127T4G
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onsemi MJD127T4G

Manufacturer No:
MJD127T4G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Datasheet:
MJD127T4G Datasheet
ECAD Model:
-
Description:
TRANS PNP DARL 100V 8A DPAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

Transistor Type:PNP - Darlington
Current - Collector (Ic) (Max):8 A
Voltage - Collector Emitter Breakdown (Max):100 V
Vce Saturation (Max) @ Ib, Ic:4V @ 80mA, 8A
Current - Collector Cutoff (Max):10µA
DC Current Gain (hFE) (Min) @ Ic, Vce:1000 @ 4A, 4V
Power - Max:1.75 W
Frequency - Transition:4MHz
Operating Temperature:-65°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package:DPAK
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$0.91
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Similar Products

Part Number MJD127T4G MJD128T4G   MJD117T4G   MJD122T4G   MJD127T4  
Manufacturer onsemi onsemi onsemi onsemi STMicroelectronics
Product Status Active Active Active Active Active
Transistor Type PNP - Darlington PNP - Darlington PNP - Darlington NPN - Darlington PNP - Darlington
Current - Collector (Ic) (Max) 8 A 8 A 2 A 8 A 8 A
Voltage - Collector Emitter Breakdown (Max) 100 V 120 V 100 V 100 V 100 V
Vce Saturation (Max) @ Ib, Ic 4V @ 80mA, 8A 4V @ 80mA, 8A 3V @ 40mA, 4A 4V @ 80mA, 8A 4V @ 80mA, 8A
Current - Collector Cutoff (Max) 10µA 5mA 20µA 10µA 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce 1000 @ 4A, 4V 1000 @ 4A, 4V 1000 @ 2A, 3V 1000 @ 4A, 4V 1000 @ 4A, 4V
Power - Max 1.75 W 1.75 W 1.75 W 1.75 W 20 W
Frequency - Transition 4MHz 4MHz 25MHz 4MHz -
Operating Temperature -65°C ~ 150°C (TJ) -65°C ~ 150°C (TJ) -65°C ~ 150°C (TJ) -65°C ~ 150°C (TJ) 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package DPAK DPAK DPAK DPAK DPAK

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