onsemi-MJD117-1G - Transistors - Bipolar (BJT) - Single Product Specifications and Latest Quotes

Part Number	MJD117-1G	MJD112-1G
Manufacturer	onsemi	onsemi
Product Status	Active	Active
Transistor Type	PNP - Darlington	NPN - Darlington
Current - Collector (Ic) (Max)	2 A	2 A
Voltage - Collector Emitter Breakdown (Max)	100 V	100 V
Vce Saturation (Max) @ Ib, Ic	3V @ 40mA, 4A	3V @ 40mA, 4A
Current - Collector Cutoff (Max)	20µA	20µA
DC Current Gain (hFE) (Min) @ Ic, Vce	1000 @ 2A, 3V	1000 @ 2A, 3V
Power - Max	1.75 W	1.75 W
Frequency - Transition	25MHz	25MHz
Operating Temperature	-65°C ~ 150°C (TJ)	-65°C ~ 150°C (TJ)
Mounting Type	Through Hole	Through Hole
Package / Case	TO-251-3 Short Leads, IPak, TO-251AA	TO-251-3 Short Leads, IPak, TO-251AA
Supplier Device Package	I-PAK	I-PAK

onsemi MJD117-1G

Transistor Type:	PNP - Darlington
Current - Collector (Ic) (Max):	2 A
Voltage - Collector Emitter Breakdown (Max):	100 V
Vce Saturation (Max) @ Ib, Ic:	3V @ 40mA, 4A
Current - Collector Cutoff (Max):	20µA
DC Current Gain (hFE) (Min) @ Ic, Vce:	1000 @ 2A, 3V
Power - Max:	1.75 W
Frequency - Transition:	25MHz
Operating Temperature:	-65°C ~ 150°C (TJ)
Mounting Type:	Through Hole
Package / Case:	TO-251-3 Short Leads, IPak, TO-251AA
Supplier Device Package:	I-PAK