onsemi-MJD112T4G - Transistors - Bipolar (BJT) - Single Product Specifications and Latest Quotes

Part Number	MJD112T4G	MJD117T4G	MJD122T4G	MJD112T4
Manufacturer	onsemi	onsemi	onsemi	STMicroelectronics
Product Status	Active	Active	Active	Active
Transistor Type	NPN - Darlington	PNP - Darlington	NPN - Darlington	NPN - Darlington
Current - Collector (Ic) (Max)	2 A	2 A	8 A	2 A
Voltage - Collector Emitter Breakdown (Max)	100 V	100 V	100 V	100 V
Vce Saturation (Max) @ Ib, Ic	3V @ 40mA, 4A	3V @ 40mA, 4A	4V @ 80mA, 8A	3V @ 40mA, 4A
Current - Collector Cutoff (Max)	20µA	20µA	10µA	20µA
DC Current Gain (hFE) (Min) @ Ic, Vce	1000 @ 2A, 3V	1000 @ 2A, 3V	1000 @ 4A, 4V	1000 @ 2A, 3V
Power - Max	20 W	1.75 W	1.75 W	20 W
Frequency - Transition	25MHz	25MHz	4MHz	25MHz
Operating Temperature	-65°C ~ 150°C (TJ)	-65°C ~ 150°C (TJ)	-65°C ~ 150°C (TJ)	150°C (TJ)
Mounting Type	Surface Mount	Surface Mount	Surface Mount	Surface Mount
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63	TO-252-3, DPak (2 Leads + Tab), SC-63	TO-252-3, DPak (2 Leads + Tab), SC-63	TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package	DPAK	DPAK	DPAK	DPAK

onsemi MJD112T4G

Transistor Type:	NPN - Darlington
Current - Collector (Ic) (Max):	2 A
Voltage - Collector Emitter Breakdown (Max):	100 V
Vce Saturation (Max) @ Ib, Ic:	3V @ 40mA, 4A
Current - Collector Cutoff (Max):	20µA
DC Current Gain (hFE) (Min) @ Ic, Vce:	1000 @ 2A, 3V
Power - Max:	20 W
Frequency - Transition:	25MHz
Operating Temperature:	-65°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package:	DPAK