onsemi-MJB45H11T4G - Transistors - Bipolar (BJT) - Single Product Specifications and Latest Quotes

Part Number	MJB45H11T4G	MJB44H11T4G
Manufacturer	onsemi	onsemi
Product Status	Active	Active
Transistor Type	PNP	NPN
Current - Collector (Ic) (Max)	10 A	10 A
Voltage - Collector Emitter Breakdown (Max)	80 V	80 V
Vce Saturation (Max) @ Ib, Ic	1V @ 400mA, 8A	1V @ 400mA, 8A
Current - Collector Cutoff (Max)	10µA	10µA
DC Current Gain (hFE) (Min) @ Ic, Vce	40 @ 4A, 1V	40 @ 4A, 1V
Power - Max	2 W	2 W
Frequency - Transition	40MHz	50MHz
Operating Temperature	-55°C ~ 150°C (TJ)	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount	Surface Mount
Package / Case	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package	D²PAK	D²PAK

onsemi MJB45H11T4G

Transistor Type:	PNP
Current - Collector (Ic) (Max):	10 A
Voltage - Collector Emitter Breakdown (Max):	80 V
Vce Saturation (Max) @ Ib, Ic:	1V @ 400mA, 8A
Current - Collector Cutoff (Max):	10µA
DC Current Gain (hFE) (Min) @ Ic, Vce:	40 @ 4A, 1V
Power - Max:	2 W
Frequency - Transition:	40MHz
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package:	D²PAK