onsemi-MJ14002 - Transistors - Bipolar (BJT) - Single Product Specifications and Latest Quotes

Part Number	MJ14002	MJ14002G	MJ15002	MJ10002
Manufacturer	onsemi	onsemi	Harris Corporation	Solid State Inc.
Product Status	Obsolete	Active	Obsolete	Active
Transistor Type	NPN	NPN	PNP	NPN - Darlington
Current - Collector (Ic) (Max)	60 A	60 A	15 A	10 A
Voltage - Collector Emitter Breakdown (Max)	80 V	80 V	140 V	350 V
Vce Saturation (Max) @ Ib, Ic	1V @ 2.5A, 25A	3V @ 12A, 60A	1V @ 400mA, 4A	-
Current - Collector Cutoff (Max)	1mA	1mA	250µA	-
DC Current Gain (hFE) (Min) @ Ic, Vce	15 @ 50A, 3V	15 @ 50A, 3V	25 @ 4A, 2V	-
Power - Max	300 W	300 W	200 W	-
Frequency - Transition	-	-	2MHz	-
Operating Temperature	-	-65°C ~ 200°C (TJ)	-65°C ~ 200°C (TJ)	-
Mounting Type	Through Hole	Through Hole	Through Hole	Through Hole
Package / Case	TO-204AE	TO-204AE	TO-204AA, TO-3	TO-204AA, TO-3
Supplier Device Package	TO-204 (TO-3)	TO-204 (TO-3)	TO-204 (TO-3)	TO-3

Transistor Type:	NPN
Current - Collector (Ic) (Max):	60 A
Voltage - Collector Emitter Breakdown (Max):	80 V
Vce Saturation (Max) @ Ib, Ic:	1V @ 2.5A, 25A
Current - Collector Cutoff (Max):	1mA
DC Current Gain (hFE) (Min) @ Ic, Vce:	15 @ 50A, 3V
Power - Max:	300 W
Frequency - Transition:	-
Operating Temperature:	-
Mounting Type:	Through Hole
Package / Case:	TO-204AE
Supplier Device Package:	TO-204 (TO-3)

onsemi MJ14002