onsemi-MJ14001G - Transistors - Bipolar (BJT) - Single Product Specifications and Latest Quotes

Part Number	MJ14001G	MJ15001G	MJ14002G
Manufacturer	onsemi	onsemi	onsemi
Product Status	Obsolete	Active	Active
Transistor Type	PNP	NPN	NPN
Current - Collector (Ic) (Max)	60 A	15 A	60 A
Voltage - Collector Emitter Breakdown (Max)	60 V	140 V	80 V
Vce Saturation (Max) @ Ib, Ic	3V @ 12A, 60A	1V @ 400mA, 4A	3V @ 12A, 60A
Current - Collector Cutoff (Max)	1mA	250µA	1mA
DC Current Gain (hFE) (Min) @ Ic, Vce	15 @ 50A, 3V	25 @ 4A, 2V	15 @ 50A, 3V
Power - Max	300 W	200 W	300 W
Frequency - Transition	-	2MHz	-
Operating Temperature	-65°C ~ 200°C (TJ)	-65°C ~ 200°C (TJ)	-65°C ~ 200°C (TJ)
Mounting Type	Through Hole	Through Hole	Through Hole
Package / Case	TO-204AE	TO-204AA, TO-3	TO-204AE
Supplier Device Package	TO-204 (TO-3)	TO-204 (TO-3)	TO-204 (TO-3)

Transistor Type:	PNP
Current - Collector (Ic) (Max):	60 A
Voltage - Collector Emitter Breakdown (Max):	60 V
Vce Saturation (Max) @ Ib, Ic:	3V @ 12A, 60A
Current - Collector Cutoff (Max):	1mA
DC Current Gain (hFE) (Min) @ Ic, Vce:	15 @ 50A, 3V
Power - Max:	300 W
Frequency - Transition:	-
Operating Temperature:	-65°C ~ 200°C (TJ)
Mounting Type:	Through Hole
Package / Case:	TO-204AE
Supplier Device Package:	TO-204 (TO-3)

onsemi MJ14001G