onsemi-MJ11016G - Transistors - Bipolar (BJT) - Single Product Specifications and Latest Quotes

Part Number	MJ11016G	MJ15016G	MJ11012G	MJ11015G	MJ11016
Manufacturer	onsemi	onsemi	onsemi	onsemi	Solid State Inc.
Product Status	Active	Active	Active	Active	Active
Transistor Type	NPN - Darlington	PNP	NPN - Darlington	PNP - Darlington	NPN - Darlington
Current - Collector (Ic) (Max)	30 A	15 A	30 A	30 A	30 A
Voltage - Collector Emitter Breakdown (Max)	120 V	120 V	60 V	120 V	120 V
Vce Saturation (Max) @ Ib, Ic	4V @ 300mA, 30A	5V @ 7A, 15A	4V @ 300mA, 30A	4V @ 300mA, 30A	4V @ 300mA, 30A
Current - Collector Cutoff (Max)	1mA	100µA	1mA	1mA	1mA
DC Current Gain (hFE) (Min) @ Ic, Vce	1000 @ 20A, 5V	10 @ 4A, 2V	1000 @ 20A, 5V	1000 @ 20A, 5V	1000 @ 20A, 5V
Power - Max	200 W	115 W	200 W	200 W	200 W
Frequency - Transition	4MHz	18MHz	4MHz	4MHz	-
Operating Temperature	-55°C ~ 200°C (TJ)	-65°C ~ 200°C (TJ)	-55°C ~ 200°C (TJ)	-55°C ~ 200°C (TJ)	-65°C ~ 200°C (TJ)
Mounting Type	Through Hole	Through Hole	Through Hole	Through Hole	Through Hole
Package / Case	TO-204AA, TO-3	TO-204AA, TO-3	TO-204AA, TO-3	TO-204AA, TO-3	TO-204AA, TO-3
Supplier Device Package	TO-204 (TO-3)	TO-204 (TO-3)	TO-204 (TO-3)	TO-204 (TO-3)	TO-3

onsemi MJ11016G

Transistor Type:	NPN - Darlington
Current - Collector (Ic) (Max):	30 A
Voltage - Collector Emitter Breakdown (Max):	120 V
Vce Saturation (Max) @ Ib, Ic:	4V @ 300mA, 30A
Current - Collector Cutoff (Max):	1mA
DC Current Gain (hFE) (Min) @ Ic, Vce:	1000 @ 20A, 5V
Power - Max:	200 W
Frequency - Transition:	4MHz
Operating Temperature:	-55°C ~ 200°C (TJ)
Mounting Type:	Through Hole
Package / Case:	TO-204AA, TO-3
Supplier Device Package:	TO-204 (TO-3)