MJ11012G
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onsemi MJ11012G

Manufacturer No:
MJ11012G
Manufacturer:
onsemi
Package:
Tray
Datasheet:
MJ11012G Datasheet
ECAD Model:
-
Description:
TRANS NPN DARL 60V 30A TO204
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

Transistor Type:NPN - Darlington
Current - Collector (Ic) (Max):30 A
Voltage - Collector Emitter Breakdown (Max):60 V
Vce Saturation (Max) @ Ib, Ic:4V @ 300mA, 30A
Current - Collector Cutoff (Max):1mA
DC Current Gain (hFE) (Min) @ Ic, Vce:1000 @ 20A, 5V
Power - Max:200 W
Frequency - Transition:4MHz
Operating Temperature:-55°C ~ 200°C (TJ)
Mounting Type:Through Hole
Package / Case:TO-204AA, TO-3
Supplier Device Package:TO-204 (TO-3)
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$7.19
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Similar Products

Part Number MJ11012G MJ11032G   MJ11022G   MJ11015G   MJ11016G   MJ11012  
Manufacturer onsemi onsemi onsemi onsemi onsemi Solid State Inc.
Product Status Active Active Active Active Active Active
Transistor Type NPN - Darlington NPN - Darlington NPN - Darlington PNP - Darlington NPN - Darlington NPN - Darlington
Current - Collector (Ic) (Max) 30 A 50 A 15 A 30 A 30 A 30 A
Voltage - Collector Emitter Breakdown (Max) 60 V 120 V 250 V 120 V 120 V 60 V
Vce Saturation (Max) @ Ib, Ic 4V @ 300mA, 30A 3.5V @ 500mA, 50A 3.4V @ 150mA, 15A 4V @ 300mA, 30A 4V @ 300mA, 30A 4V @ 300mA, 30A
Current - Collector Cutoff (Max) 1mA 2mA 1mA 1mA 1mA 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce 1000 @ 20A, 5V 1000 @ 25A, 5V 400 @ 10A, 5V 1000 @ 20A, 5V 1000 @ 20A, 5V 1000 @ 20A, 5V
Power - Max 200 W 300 W 175 W 200 W 200 W 200 W
Frequency - Transition 4MHz - - 4MHz 4MHz -
Operating Temperature -55°C ~ 200°C (TJ) -55°C ~ 200°C (TJ) -65°C ~ 200°C (TJ) -55°C ~ 200°C (TJ) -55°C ~ 200°C (TJ) -65°C ~ 200°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole
Package / Case TO-204AA, TO-3 TO-204AE TO-204AA, TO-3 TO-204AA, TO-3 TO-204AA, TO-3 TO-204AA, TO-3
Supplier Device Package TO-204 (TO-3) TO-204 (TO-3) TO-204 (TO-3) TO-204 (TO-3) TO-204 (TO-3) TO-3

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