MCH6602-TL-E
  • Share:

onsemi MCH6602-TL-E

Manufacturer No:
MCH6602-TL-E
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Datasheet:
MCH6602-TL-E Datasheet
ECAD Model:
-
Description:
MOSFET 2N-CH 30V 0.35A MCPH6
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:2 N-Channel (Dual)
FET Feature:Logic Level Gate
Drain to Source Voltage (Vdss):30V
Current - Continuous Drain (Id) @ 25°C:350mA
Rds On (Max) @ Id, Vgs:3.7Ohm @ 80mA, 4V
Vgs(th) (Max) @ Id:- 
Gate Charge (Qg) (Max) @ Vgs:1.58nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds:7pF @ 10V
Power - Max:800mW
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:6-SMD, Flat Leads
Supplier Device Package:6-MCPH
0 Remaining View Similar

In Stock

$0.12
6,379

Please send RFQ , we will respond immediately.

Similar Products

Part Number MCH6602-TL-E MCH6604-TL-E   MCH6605-TL-E   MCH6601-TL-E  
Manufacturer onsemi onsemi onsemi onsemi
Product Status Obsolete Obsolete Obsolete Obsolete
FET Type 2 N-Channel (Dual) 2 N-Channel (Dual) 2 P-Channel (Dual) 2 P-Channel (Dual)
FET Feature Logic Level Gate Logic Level Gate Logic Level Gate, 4V Drive Logic Level Gate
Drain to Source Voltage (Vdss) 30V 50V 50V 30V
Current - Continuous Drain (Id) @ 25°C 350mA 250mA 140mA 200mA
Rds On (Max) @ Id, Vgs 3.7Ohm @ 80mA, 4V 7.8Ohm @ 50mA, 4V 22Ohm @ 40mA, 10V 10.4Ohm @ 50mA, 4V
Vgs(th) (Max) @ Id - - - -
Gate Charge (Qg) (Max) @ Vgs 1.58nC @ 10V 1.57nC @ 10V 1.32nC @ 10V 1.43nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 7pF @ 10V 6.6pF @ 10V 6.2pF @ 10V 7.5pF @ 10V
Power - Max 800mW 800mW 800mW 800mW
Operating Temperature -55°C ~ 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case 6-SMD, Flat Leads 6-SMD, Flat Leads 6-SMD, Flat Leads 6-SMD, Flat Leads
Supplier Device Package 6-MCPH 6-MCPH 6-MCPH 6-MCPH

Related Product By Categories

GE12047BCA3
GE12047BCA3
General Electric
1200V 475A SiC Dual Module
SI4931DY-T1-GE3
SI4931DY-T1-GE3
Vishay Siliconix
MOSFET 2P-CH 12V 6.7A 8SOIC
DMN2990UDJ-7
DMN2990UDJ-7
Diodes Incorporated
MOSFET 2N-CH 20V 0.45A SOT-963
DMN61D9UDW-13
DMN61D9UDW-13
Diodes Incorporated
MOSFET 2N-CH 60V 0.35A SOT363
FCB20N60F
FCB20N60F
Fairchild Semiconductor
MOSFET N-CH 600V 20A D2PAK
DMP2110UFDB-13
DMP2110UFDB-13
Diodes Incorporated
MOSFET BVDSS: 8V~24V U-DFN2020-6
DMC1028UVT-13
DMC1028UVT-13
Diodes Incorporated
MOSFET BVDSS: 8V~24V TSOT26 T&R
WAB300M12BM3
WAB300M12BM3
Wolfspeed, Inc.
1200 V, 300 A HALF-BRIDGE MODULE
IRF9952
IRF9952
Infineon Technologies
MOSFET N/P-CH 30V 8-SOIC
IRF7501TR
IRF7501TR
Infineon Technologies
MOSFET 2N-CH 20V 2.4A MICRO8
IRF7104PBF
IRF7104PBF
Infineon Technologies
MOSFET 2P-CH 20V 2.3A 8-SOIC
TPC8207(TE12L,Q)
TPC8207(TE12L,Q)
Toshiba Semiconductor and Storage
MOSFET 2N-CH 20V 6A 8-SOP

Related Product By Brand

1N5367BRLG
1N5367BRLG
onsemi
DIODE ZENER 43V 5W AXIAL
BZX85C22_T50A
BZX85C22_T50A
onsemi
DIODE ZENER 22V 1W DO204AL
FNB41060B2
FNB41060B2
onsemi
IGBT 3PH 600V 10A MODULE
MJB42CT4G
MJB42CT4G
onsemi
TRANS PNP 100V 6A D2PAK
FDD8447L
FDD8447L
onsemi
MOSFET N-CH 40V 15.2A/50A DPAK
HUF75329G3
HUF75329G3
onsemi
MOSFET N-CH 55V 49A TO247-3
NB2305AC1HDTR2G
NB2305AC1HDTR2G
onsemi
IC BUFFER CLK 5OUT 3.3V 8-TSSOP
CAT803MTBI-T3
CAT803MTBI-T3
onsemi
CAT803 - 3-PIN MICROPROCESSOR PO
MC74HC32ADR2G
MC74HC32ADR2G
onsemi
IC GATE OR 4CH 2-INP 14SOIC
DM74AS32SJX
DM74AS32SJX
onsemi
IC GATE OR 4CH 2-INP 14SOP
CAV93C46YE-GT3
CAV93C46YE-GT3
onsemi
IC EEPROM 1KBIT SPI 2MHZ 8TSSOP
NCP115AMX110TBG
NCP115AMX110TBG
onsemi
IC REG LINEAR 1.1V 300MA 4XDFN