onsemi-MCH5837-TL-E - Transistors - FETs, MOSFETs - Single Product Specifications and Latest Quotes

FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	20 V
Current - Continuous Drain (Id) @ 25°C:	2A (Ta)
Drive Voltage (Max Rds On, Min Rds On):	-
Rds On (Max) @ Id, Vgs:	145mOhm @ 1A, 4V
Vgs(th) (Max) @ Id:	-
Gate Charge (Qg) (Max) @ Vgs:	1.8 nC @ 4 V
Vgs (Max):	-
Input Capacitance (Ciss) (Max) @ Vds:	115 pF @ 10 V
FET Feature:	Schottky Diode (Isolated)
Power Dissipation (Max):	800mW (Ta)
Operating Temperature:	150°C (TJ)
Mounting Type:	Surface Mount
Supplier Device Package:	5-MCPH
Package / Case:	6-SMD (5 Leads), Flat Lead

onsemi MCH5837-TL-E