onsemi-KSP8099TA - Transistors - Bipolar (BJT) - Single Product Specifications and Latest Quotes

Part Number	KSP8099TA	KSP8099TF	KSP8599TA	KSP8098TA
Manufacturer	onsemi	Fairchild Semiconductor	onsemi	Fairchild Semiconductor
Product Status	Obsolete	Obsolete	Obsolete	Obsolete
Transistor Type	NPN	NPN	PNP	NPN
Current - Collector (Ic) (Max)	500 mA	500 mA	500 mA	500 mA
Voltage - Collector Emitter Breakdown (Max)	80 V	80 V	80 V	60 V
Vce Saturation (Max) @ Ib, Ic	300mV @ 10mA, 100mA	300mV @ 10mA, 100mA	400mV @ 5mA, 100mA	300mV @ 10mA, 100mA
Current - Collector Cutoff (Max)	100nA	100nA	100nA	100nA
DC Current Gain (hFE) (Min) @ Ic, Vce	100 @ 1mA, 5V	100 @ 1mA, 5V	100 @ 1mA, 5V	100 @ 1mA, 5V
Power - Max	625 mW	625 mW	625 mW	625 mW
Frequency - Transition	150MHz	150MHz	150MHz	150MHz
Operating Temperature	150°C (TJ)	150°C (TJ)	150°C (TJ)	150°C (TJ)
Mounting Type	Through Hole	Through Hole	Through Hole	Through Hole
Package / Case	TO-226-3, TO-92-3 (TO-226AA) Formed Leads	TO-226-3, TO-92-3 (TO-226AA) Formed Leads	TO-226-3, TO-92-3 (TO-226AA) Formed Leads	TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Supplier Device Package	TO-92-3	TO-92-3	TO-92-3	TO-92-3

onsemi KSP8099TA

Transistor Type:	NPN
Current - Collector (Ic) (Max):	500 mA
Voltage - Collector Emitter Breakdown (Max):	80 V
Vce Saturation (Max) @ Ib, Ic:	300mV @ 10mA, 100mA
Current - Collector Cutoff (Max):	100nA
DC Current Gain (hFE) (Min) @ Ic, Vce:	100 @ 1mA, 5V
Power - Max:	625 mW
Frequency - Transition:	150MHz
Operating Temperature:	150°C (TJ)
Mounting Type:	Through Hole
Package / Case:	TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Supplier Device Package:	TO-92-3