onsemi-KSP5179TA - Transistors - Bipolar (BJT) - Single Product Specifications and Latest Quotes

Transistor Type:	NPN
Current - Collector (Ic) (Max):	50 mA
Voltage - Collector Emitter Breakdown (Max):	12 V
Vce Saturation (Max) @ Ib, Ic:	400mV @ 1mA, 10mA
Current - Collector Cutoff (Max):	20nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:	25 @ 3mA, 1V
Power - Max:	200 mW
Frequency - Transition:	2GHz
Operating Temperature:	150°C (TJ)
Mounting Type:	Through Hole
Package / Case:	TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Supplier Device Package:	TO-92-3

onsemi KSP5179TA