onsemi-KSP06TA - Transistors - Bipolar (BJT) - Single Product Specifications and Latest Quotes

Part Number	KSP06TA	KSP26TA	KSP56TA	KSP05TA
Manufacturer	onsemi	onsemi	onsemi	Fairchild Semiconductor
Product Status	Obsolete	Obsolete	Obsolete	Active
Transistor Type	NPN	NPN - Darlington	PNP	NPN
Current - Collector (Ic) (Max)	500 mA	500 mA	500 mA	500 mA
Voltage - Collector Emitter Breakdown (Max)	80 V	50 V	80 V	60 V
Vce Saturation (Max) @ Ib, Ic	250mV @ 10mA, 100mA	1.5V @ 100µA, 100mA	250mV @ 10mA, 100mA	250mV @ 10mA, 100mA
Current - Collector Cutoff (Max)	100nA	100nA (ICBO)	100nA	100nA
DC Current Gain (hFE) (Min) @ Ic, Vce	50 @ 100mA, 1V	10000 @ 100mA, 5V	50 @ 100mA, 1V	50 @ 100mA, 1V
Power - Max	625 mW	625 mW	625 mW	625 mW
Frequency - Transition	100MHz	-	50MHz	100MHz
Operating Temperature	150°C (TJ)	150°C (TJ)	150°C (TJ)	150°C (TJ)
Mounting Type	Through Hole	Through Hole	Through Hole	Through Hole
Package / Case	TO-226-3, TO-92-3 (TO-226AA) Formed Leads	TO-226-3, TO-92-3 (TO-226AA) Formed Leads	TO-226-3, TO-92-3 (TO-226AA) Formed Leads	TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Supplier Device Package	TO-92-3	TO-92-3	TO-92-3	TO-92-3

onsemi KSP06TA

Transistor Type:	NPN
Current - Collector (Ic) (Max):	500 mA
Voltage - Collector Emitter Breakdown (Max):	80 V
Vce Saturation (Max) @ Ib, Ic:	250mV @ 10mA, 100mA
Current - Collector Cutoff (Max):	100nA
DC Current Gain (hFE) (Min) @ Ic, Vce:	50 @ 100mA, 1V
Power - Max:	625 mW
Frequency - Transition:	100MHz
Operating Temperature:	150°C (TJ)
Mounting Type:	Through Hole
Package / Case:	TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Supplier Device Package:	TO-92-3