onsemi-KSH29ITU - Transistors - Bipolar (BJT) - Single Product Specifications and Latest Quotes

Part Number	KSH29ITU	KSH29CITU
Manufacturer	onsemi	onsemi
Product Status	Obsolete	Obsolete
Transistor Type	NPN	NPN
Current - Collector (Ic) (Max)	1 A	1 A
Voltage - Collector Emitter Breakdown (Max)	40 V	100 V
Vce Saturation (Max) @ Ib, Ic	700mV @ 125mA, 1A	700mV @ 125mA, 1A
Current - Collector Cutoff (Max)	50µA	50µA
DC Current Gain (hFE) (Min) @ Ic, Vce	15 @ 1A, 4V	15 @ 1A, 4V
Power - Max	1.56 W	1.56 W
Frequency - Transition	3MHz	3MHz
Operating Temperature	150°C (TJ)	150°C (TJ)
Mounting Type	Through Hole	Through Hole
Package / Case	TO-251-3 Short Leads, IPak, TO-251AA	TO-251-3 Short Leads, IPak, TO-251AA
Supplier Device Package	I-PAK	I-PAK

onsemi KSH29ITU

Transistor Type:	NPN
Current - Collector (Ic) (Max):	1 A
Voltage - Collector Emitter Breakdown (Max):	40 V
Vce Saturation (Max) @ Ib, Ic:	700mV @ 125mA, 1A
Current - Collector Cutoff (Max):	50µA
DC Current Gain (hFE) (Min) @ Ic, Vce:	15 @ 1A, 4V
Power - Max:	1.56 W
Frequency - Transition:	3MHz
Operating Temperature:	150°C (TJ)
Mounting Type:	Through Hole
Package / Case:	TO-251-3 Short Leads, IPak, TO-251AA
Supplier Device Package:	I-PAK