onsemi-KSE800STSSTU - Transistors - Bipolar (BJT) - Single Product Specifications and Latest Quotes

Transistor Type:	NPN - Darlington
Current - Collector (Ic) (Max):	4 A
Voltage - Collector Emitter Breakdown (Max):	60 V
Vce Saturation (Max) @ Ib, Ic:	2.5V @ 30mA, 1.5A
Current - Collector Cutoff (Max):	100µA
DC Current Gain (hFE) (Min) @ Ic, Vce:	750 @ 1.5A, 3V
Power - Max:	40 W
Frequency - Transition:	-
Operating Temperature:	150°C (TJ)
Mounting Type:	Through Hole
Package / Case:	TO-225AA, TO-126-3
Supplier Device Package:	TO-126-3

onsemi KSE800STSSTU