onsemi-KSE13003H2ASTU - Transistors - Bipolar (BJT) - Single Product Specifications and Latest Quotes

Part Number	KSE13003H2ASTU	KSE13003H3ASTU	KSE13003H1ASTU
Manufacturer	onsemi	Fairchild Semiconductor	onsemi
Product Status	Active	Obsolete	Active
Transistor Type	NPN	NPN	NPN
Current - Collector (Ic) (Max)	1.5 A	1.5 A	1.5 A
Voltage - Collector Emitter Breakdown (Max)	400 V	400 V	400 V
Vce Saturation (Max) @ Ib, Ic	3V @ 500mA, 1.5A	3V @ 500mA, 1.5A	3V @ 500mA, 1.5A
Current - Collector Cutoff (Max)	-	-	-
DC Current Gain (hFE) (Min) @ Ic, Vce	14 @ 500mA, 2V	19 @ 500mA, 2V	9 @ 500mA, 2V
Power - Max	20 W	20 W	20 W
Frequency - Transition	4MHz	4MHz	4MHz
Operating Temperature	150°C (TJ)	150°C (TJ)	150°C (TJ)
Mounting Type	Through Hole	Through Hole	Through Hole
Package / Case	TO-225AA, TO-126-3	TO-225AA, TO-126-3	TO-225AA, TO-126-3
Supplier Device Package	TO-126-3	TO-126-3	TO-126-3

Transistor Type:	NPN
Current - Collector (Ic) (Max):	1.5 A
Voltage - Collector Emitter Breakdown (Max):	400 V
Vce Saturation (Max) @ Ib, Ic:	3V @ 500mA, 1.5A
Current - Collector Cutoff (Max):	-
DC Current Gain (hFE) (Min) @ Ic, Vce:	14 @ 500mA, 2V
Power - Max:	20 W
Frequency - Transition:	4MHz
Operating Temperature:	150°C (TJ)
Mounting Type:	Through Hole
Package / Case:	TO-225AA, TO-126-3
Supplier Device Package:	TO-126-3

onsemi KSE13003H2ASTU