onsemi-KSD1616AGTA - Transistors - Bipolar (BJT) - Single Product Specifications and Latest Quotes

Part Number	KSD1616AGTA	KSD1616AYTA	KSD1616ALTA	KSD1616GTA
Manufacturer	onsemi	onsemi	Fairchild Semiconductor	Fairchild Semiconductor
Product Status	Active	Active	Active	Obsolete
Transistor Type	NPN	NPN	NPN	NPN
Current - Collector (Ic) (Max)	1 A	1 A	1 A	1 A
Voltage - Collector Emitter Breakdown (Max)	60 V	60 V	60 V	50 V
Vce Saturation (Max) @ Ib, Ic	300mV @ 50mA, 1A	300mV @ 50mA, 1A	300mV @ 50mA, 1A	300mV @ 50mA, 1A
Current - Collector Cutoff (Max)	100nA (ICBO)	100nA (ICBO)	100nA (ICBO)	100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce	200 @ 100mA, 2V	135 @ 100mA, 2V	300 @ 100mA, 2V	200 @ 100mA, 2V
Power - Max	750 mW	750 mW	750 mW	750 mW
Frequency - Transition	160MHz	160MHz	160MHz	160MHz
Operating Temperature	150°C (TJ)	150°C (TJ)	150°C (TJ)	150°C (TJ)
Mounting Type	Through Hole	Through Hole	Through Hole	Through Hole
Package / Case	TO-226-3, TO-92-3 (TO-226AA) Formed Leads	TO-226-3, TO-92-3 (TO-226AA) Formed Leads	TO-226-3, TO-92-3 (TO-226AA) Formed Leads	TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Supplier Device Package	TO-92-3	TO-92-3	TO-92-3	TO-92-3

onsemi KSD1616AGTA

Transistor Type:	NPN
Current - Collector (Ic) (Max):	1 A
Voltage - Collector Emitter Breakdown (Max):	60 V
Vce Saturation (Max) @ Ib, Ic:	300mV @ 50mA, 1A
Current - Collector Cutoff (Max):	100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:	200 @ 100mA, 2V
Power - Max:	750 mW
Frequency - Transition:	160MHz
Operating Temperature:	150°C (TJ)
Mounting Type:	Through Hole
Package / Case:	TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Supplier Device Package:	TO-92-3