onsemi-KSD1222TU - Transistors - Bipolar (BJT) - Single Product Specifications and Latest Quotes

Transistor Type:	NPN - Darlington
Current - Collector (Ic) (Max):	3 A
Voltage - Collector Emitter Breakdown (Max):	40 V
Vce Saturation (Max) @ Ib, Ic:	1.5V @ 4mA, 2A
Current - Collector Cutoff (Max):	20µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:	1000 @ 3A, 2V
Power - Max:	1 W
Frequency - Transition:	-
Operating Temperature:	150°C (TJ)
Mounting Type:	Through Hole
Package / Case:	TO-251-3 Short Leads, IPak, TO-251AA
Supplier Device Package:	I-PAK

onsemi KSD1222TU