onsemi-KSC5026MOS - Transistors - Bipolar (BJT) - Single Product Specifications and Latest Quotes

Transistor Type:	NPN
Current - Collector (Ic) (Max):	1.5 A
Voltage - Collector Emitter Breakdown (Max):	800 V
Vce Saturation (Max) @ Ib, Ic:	2V @ 150mA, 750mA
Current - Collector Cutoff (Max):	10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:	20 @ 100mA, 5V
Power - Max:	20 W
Frequency - Transition:	15MHz
Operating Temperature:	150°C (TJ)
Mounting Type:	Through Hole
Package / Case:	TO-225AA, TO-126-3
Supplier Device Package:	TO-126-3

onsemi KSC5026MOS