onsemi-KSC3502ES - Transistors - Bipolar (BJT) - Single Product Specifications and Latest Quotes

Transistor Type:	NPN
Current - Collector (Ic) (Max):	100 mA
Voltage - Collector Emitter Breakdown (Max):	200 V
Vce Saturation (Max) @ Ib, Ic:	600mV @ 2mA, 20mA
Current - Collector Cutoff (Max):	100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:	100 @ 10mA, 10V
Power - Max:	1.2 W
Frequency - Transition:	150MHz
Operating Temperature:	150°C (TJ)
Mounting Type:	Through Hole
Package / Case:	TO-225AA, TO-126-3
Supplier Device Package:	TO-126-3

onsemi KSC3502ES