onsemi-KSC2500BBU - Transistors - Bipolar (BJT) - Single Product Specifications and Latest Quotes

Part Number	KSC2500BBU	KSC2500DBU	KSC2500CBU
Manufacturer	onsemi	onsemi	onsemi
Product Status	Obsolete	Obsolete	Obsolete
Transistor Type	NPN	NPN	NPN
Current - Collector (Ic) (Max)	2 A	2 A	2 A
Voltage - Collector Emitter Breakdown (Max)	10 V	10 V	10 V
Vce Saturation (Max) @ Ib, Ic	500mV @ 50mA, 2A	500mV @ 50mA, 2A	500mV @ 50mA, 2A
Current - Collector Cutoff (Max)	100nA (ICBO)	100nA (ICBO)	100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce	200 @ 500mA, 1V	420 @ 500mA, 1V	300 @ 500mA, 1V
Power - Max	900 mW	900 mW	900 mW
Frequency - Transition	150MHz	150MHz	150MHz
Operating Temperature	150°C (TJ)	150°C (TJ)	150°C (TJ)
Mounting Type	Through Hole	Through Hole	Through Hole
Package / Case	TO-226-3, TO-92-3 Long Body	TO-226-3, TO-92-3 Long Body	TO-226-3, TO-92-3 Long Body
Supplier Device Package	TO-92-3	TO-92-3	TO-92-3

onsemi KSC2500BBU

Transistor Type:	NPN
Current - Collector (Ic) (Max):	2 A
Voltage - Collector Emitter Breakdown (Max):	10 V
Vce Saturation (Max) @ Ib, Ic:	500mV @ 50mA, 2A
Current - Collector Cutoff (Max):	100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:	200 @ 500mA, 1V
Power - Max:	900 mW
Frequency - Transition:	150MHz
Operating Temperature:	150°C (TJ)
Mounting Type:	Through Hole
Package / Case:	TO-226-3, TO-92-3 Long Body
Supplier Device Package:	TO-92-3