onsemi-KSB906YTU - Transistors - Bipolar (BJT) - Single Product Specifications and Latest Quotes

Transistor Type:	PNP
Current - Collector (Ic) (Max):	3 A
Voltage - Collector Emitter Breakdown (Max):	60 V
Vce Saturation (Max) @ Ib, Ic:	1.7V @ 300mA, 3A
Current - Collector Cutoff (Max):	100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:	100 @ 500mA, 5V
Power - Max:	1 W
Frequency - Transition:	9MHz
Operating Temperature:	150°C (TJ)
Mounting Type:	Through Hole
Package / Case:	TO-251-3 Short Leads, IPak, TO-251AA
Supplier Device Package:	I-PAK

onsemi KSB906YTU