onsemi-KSB564AGBU - Transistors - Bipolar (BJT) - Single Product Specifications and Latest Quotes

Part Number	KSB564AGBU	KSB564AYBU	KSB564AOBU	KSB564ACGBU
Manufacturer	onsemi	Fairchild Semiconductor	Fairchild Semiconductor	Fairchild Semiconductor
Product Status	Obsolete	Obsolete	Obsolete	Obsolete
Transistor Type	PNP	PNP	PNP	PNP
Current - Collector (Ic) (Max)	1 A	1 A	1 A	1 A
Voltage - Collector Emitter Breakdown (Max)	25 V	25 V	25 V	25 V
Vce Saturation (Max) @ Ib, Ic	500mV @ 100mA, 1A	500mV @ 100mA, 1A	500mV @ 100mA, 1A	500mV @ 100mA, 1A
Current - Collector Cutoff (Max)	100nA (ICBO)	100nA (ICBO)	100nA (ICBO)	100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce	200 @ 100mA, 1V	120 @ 100mA, 1V	70 @ 100mA, 1V	200 @ 100mA, 1V
Power - Max	800 mW	800 mW	800 mW	800 mW
Frequency - Transition	110MHz	110MHz	110MHz	110MHz
Operating Temperature	150°C (TJ)	150°C (TJ)	150°C (TJ)	150°C (TJ)
Mounting Type	Through Hole	Through Hole	Through Hole	Through Hole
Package / Case	TO-226-3, TO-92-3 (TO-226AA)	TO-226-3, TO-92-3 (TO-226AA)	TO-226-3, TO-92-3 (TO-226AA)	TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package	TO-92-3	TO-92-3	TO-92-3	TO-92-3

onsemi KSB564AGBU

Transistor Type:	PNP
Current - Collector (Ic) (Max):	1 A
Voltage - Collector Emitter Breakdown (Max):	25 V
Vce Saturation (Max) @ Ib, Ic:	500mV @ 100mA, 1A
Current - Collector Cutoff (Max):	100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:	200 @ 100mA, 1V
Power - Max:	800 mW
Frequency - Transition:	110MHz
Operating Temperature:	150°C (TJ)
Mounting Type:	Through Hole
Package / Case:	TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package:	TO-92-3