KSB1116GBU
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onsemi KSB1116GBU

Manufacturer No:
KSB1116GBU
Manufacturer:
onsemi
Package:
Bulk
Datasheet:
KSB1116GBU Datasheet
ECAD Model:
-
Description:
TRANS PNP 50V 1A TO92-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

Transistor Type:PNP
Current - Collector (Ic) (Max):1 A
Voltage - Collector Emitter Breakdown (Max):50 V
Vce Saturation (Max) @ Ib, Ic:300mV @ 50mA, 1A
Current - Collector Cutoff (Max):100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:200 @ 100mA, 2V
Power - Max:750 mW
Frequency - Transition:120MHz
Operating Temperature:150°C (TJ)
Mounting Type:Through Hole
Package / Case:TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Supplier Device Package:TO-92-3
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In Stock

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70

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Similar Products

Part Number KSB1116GBU KSB1116YBU   KSB1116LBU   KSB1116AGBU  
Manufacturer onsemi Fairchild Semiconductor onsemi Fairchild Semiconductor
Product Status Obsolete Obsolete Obsolete Obsolete
Transistor Type PNP PNP PNP PNP
Current - Collector (Ic) (Max) 1 A 1 A 1 A 1 A
Voltage - Collector Emitter Breakdown (Max) 50 V 50 V 50 V 60 V
Vce Saturation (Max) @ Ib, Ic 300mV @ 50mA, 1A 300mV @ 50mA, 1A 300mV @ 50mA, 1A 300mV @ 50mA, 1A
Current - Collector Cutoff (Max) 100nA (ICBO) 100nA (ICBO) 100nA (ICBO) 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 100mA, 2V 135 @ 100mA, 2V 300 @ 100mA, 2V 200 @ 100mA, 2V
Power - Max 750 mW 750 mW 750 mW 750 mW
Frequency - Transition 120MHz 120MHz 120MHz 120MHz
Operating Temperature 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA) Formed Leads TO-226-3, TO-92-3 (TO-226AA) Formed Leads TO-226-3, TO-92-3 (TO-226AA) Formed Leads TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Supplier Device Package TO-92-3 TO-92-3 TO-92-3 TO-92-3

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