onsemi-KSA992FTA - Transistors - Bipolar (BJT) - Single Product Specifications and Latest Quotes

Part Number	KSA992FTA	KSA992PTA	KSA992FATA	KSA992FBTA
Manufacturer	onsemi	Fairchild Semiconductor	onsemi	onsemi
Product Status	Active	Obsolete	Active	Active
Transistor Type	PNP	PNP	PNP	PNP
Current - Collector (Ic) (Max)	50 mA	50 mA	50 mA	50 mA
Voltage - Collector Emitter Breakdown (Max)	120 V	120 V	120 V	120 V
Vce Saturation (Max) @ Ib, Ic	300mV @ 1mA, 10mA	300mV @ 1mA, 10mA	300mV @ 1mA, 10mA	300mV @ 1mA, 10mA
Current - Collector Cutoff (Max)	1µA	1µA	1µA	1µA
DC Current Gain (hFE) (Min) @ Ic, Vce	300 @ 1mA, 6V	200 @ 1mA, 6V	200 @ 1mA, 6V	430 @ 1mA, 6V
Power - Max	500 mW	500 mW	500 mW	500 mW
Frequency - Transition	100MHz	100MHz	100MHz	100MHz
Operating Temperature	150°C (TJ)	150°C (TJ)	150°C (TJ)	150°C (TJ)
Mounting Type	Through Hole	Through Hole	Through Hole	Through Hole
Package / Case	TO-226-3, TO-92-3 (TO-226AA) Formed Leads	TO-226-3, TO-92-3 (TO-226AA) Formed Leads	TO-226-3, TO-92-3 (TO-226AA) Formed Leads	TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Supplier Device Package	TO-92-3	TO-92-3	TO-92-3	TO-92-3

onsemi KSA992FTA

Transistor Type:	PNP
Current - Collector (Ic) (Max):	50 mA
Voltage - Collector Emitter Breakdown (Max):	120 V
Vce Saturation (Max) @ Ib, Ic:	300mV @ 1mA, 10mA
Current - Collector Cutoff (Max):	1µA
DC Current Gain (hFE) (Min) @ Ic, Vce:	300 @ 1mA, 6V
Power - Max:	500 mW
Frequency - Transition:	100MHz
Operating Temperature:	150°C (TJ)
Mounting Type:	Through Hole
Package / Case:	TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Supplier Device Package:	TO-92-3