onsemi-KSA910YSHTA - Transistors - Bipolar (BJT) - Single Product Specifications and Latest Quotes

Transistor Type:	PNP
Current - Collector (Ic) (Max):	50 mA
Voltage - Collector Emitter Breakdown (Max):	150 V
Vce Saturation (Max) @ Ib, Ic:	800mV @ 1mA, 10mA
Current - Collector Cutoff (Max):	100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:	120 @ 10mA, 5V
Power - Max:	800 mW
Frequency - Transition:	100MHz
Operating Temperature:	-
Mounting Type:	Through Hole
Package / Case:	TO-226-3, TO-92-3 Long Body (Formed Leads)
Supplier Device Package:	TO-92-3

onsemi KSA910YSHTA