ISL9R8120P2
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onsemi ISL9R8120P2

Manufacturer No:
ISL9R8120P2
Manufacturer:
onsemi
Package:
Tube
Datasheet:
ISL9R8120P2 Datasheet
ECAD Model:
-
Description:
DIODE GEN PURP 1.2KV 8A TO220-2L
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):1200 V
Current - Average Rectified (Io):8A
Voltage - Forward (Vf) (Max) @ If:3.3 V @ 8 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):300 ns
Current - Reverse Leakage @ Vr:100 µA @ 1200 V
Capacitance @ Vr, F:30pF @ 10V, 1MHz
Mounting Type:Through Hole
Package / Case:TO-220-2
Supplier Device Package:TO-220-2L
Operating Temperature - Junction:-55°C ~ 150°C
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Similar Products

Part Number ISL9R8120P2 ISL9R18120P2  
Manufacturer onsemi onsemi
Product Status Obsolete Obsolete
Diode Type Standard Standard
Voltage - DC Reverse (Vr) (Max) 1200 V 1200 V
Current - Average Rectified (Io) 8A 18A
Voltage - Forward (Vf) (Max) @ If 3.3 V @ 8 A 3.3 V @ 18 A
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 300 ns 70 ns
Current - Reverse Leakage @ Vr 100 µA @ 1200 V 100 µA @ 1200 V
Capacitance @ Vr, F 30pF @ 10V, 1MHz -
Mounting Type Through Hole Through Hole
Package / Case TO-220-2 TO-220-2
Supplier Device Package TO-220-2L TO-220-2
Operating Temperature - Junction -55°C ~ 150°C -55°C ~ 150°C

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