IRL8113PBF
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onsemi IRL8113PBF

Manufacturer No:
IRL8113PBF
Manufacturer:
onsemi
Package:
Bulk
Datasheet:
IRL8113PBF Datasheet
ECAD Model:
-
Description:
HEXFET POWER MOSFET
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:105A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:6mOhm @ 21A, 10V
Vgs(th) (Max) @ Id:2.25V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:35 nC @ 4.5 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:2840 pF @ 15 V
FET Feature:- 
Power Dissipation (Max):110W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220AB
Package / Case:TO-220-3
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Similar Products

Part Number IRL8113PBF IRL8113SPBF   IRL8113LPBF  
Manufacturer onsemi Infineon Technologies Infineon Technologies
Product Status Active Obsolete Obsolete
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V 30 V 30 V
Current - Continuous Drain (Id) @ 25°C 105A (Tc) 105A (Tc) 105A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 6mOhm @ 21A, 10V 6mOhm @ 21A, 10V 6mOhm @ 21A, 10V
Vgs(th) (Max) @ Id 2.25V @ 250µA 2.25V @ 250µA 2.25V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 35 nC @ 4.5 V 35 nC @ 4.5 V 35 nC @ 4.5 V
Vgs (Max) ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 2840 pF @ 15 V 2840 pF @ 15 V 2840 pF @ 15 V
FET Feature - - -
Power Dissipation (Max) 110W (Tc) 110W (Tc) 110W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Through Hole Surface Mount Through Hole
Supplier Device Package TO-220AB D2PAK TO-262
Package / Case TO-220-3 TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-262-3 Long Leads, I²Pak, TO-262AA

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