IRF720
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onsemi IRF720

Manufacturer No:
IRF720
Manufacturer:
onsemi
Package:
Tube
Datasheet:
IRF720 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 400V 3.3A TO220AB
Delivery:
Payment:
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):400 V
Current - Continuous Drain (Id) @ 25°C:3.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:1.8Ohm @ 2A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:20 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:410 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):50W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220AB
Package / Case:TO-220-3
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Similar Products

Part Number IRF720 IRF740   IRF7201   IRF720S   IRF7220   IRF7204   IRF7207   IRF720L   IRF710  
Manufacturer onsemi Vishay Siliconix Infineon Technologies Vishay Siliconix Infineon Technologies Infineon Technologies Infineon Technologies Vishay Siliconix Fairchild Semiconductor
Product Status Obsolete Obsolete Obsolete Obsolete Obsolete Obsolete Obsolete Obsolete Obsolete
FET Type N-Channel N-Channel N-Channel N-Channel P-Channel P-Channel P-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 400 V 400 V 30 V 400 V 14 V 20 V 20 V 400 V 400 V
Current - Continuous Drain (Id) @ 25°C 3.3A (Tc) 10A (Tc) 7.3A (Tc) 3.3A (Tc) 11A (Ta) 5.3A (Ta) 5.4A (Tc) 3.3A (Tc) 2A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 4.5V, 10V 10V 2.5V, 4.5V 4.5V, 10V 2.7V, 4.5V 10V -
Rds On (Max) @ Id, Vgs 1.8Ohm @ 2A, 10V 550mOhm @ 6A, 10V 30mOhm @ 7.3A, 10V 1.8Ohm @ 2A, 10V 12mOhm @ 11A, 4.5V 60mOhm @ 5.3A, 10V 60mOhm @ 5.4A, 4.5V 1.8Ohm @ 2A, 10V 3.6Ohm @ 1.1A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 4V @ 250µA 1V @ 250µA 4V @ 250µA 600mV @ 250µA (Min) 2.5V @ 250µA 700mV @ 250µA (Min) 4V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 20 nC @ 10 V 63 nC @ 10 V 28 nC @ 10 V 20 nC @ 10 V 125 nC @ 5 V 25 nC @ 10 V 22 nC @ 4.5 V 20 nC @ 10 V 12 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V ±20V ±12V ±12V ±12V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 410 pF @ 25 V 1400 pF @ 25 V 550 pF @ 25 V 410 pF @ 25 V 8075 pF @ 10 V 860 pF @ 10 V 780 pF @ 15 V 410 pF @ 25 V 135 pF @ 25 V
FET Feature - - - - - - - - -
Power Dissipation (Max) 50W (Tc) 125W (Tc) 2.5W (Tc) 3.1W (Ta), 50W (Tc) 2.5W (Ta) 2.5W (Tc) 2.5W (Tc) 3.1W (Ta), 50W (Tc) 36W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Through Hole Through Hole
Supplier Device Package TO-220AB TO-220AB 8-SO D²PAK (TO-263) 8-SO 8-SO 8-SO I2PAK TO-220AB
Package / Case TO-220-3 TO-220-3 8-SOIC (0.154", 3.90mm Width) TO-263-3, D²Pak (2 Leads + Tab), TO-263AB 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) TO-262-3 Long Leads, I²Pak, TO-262AA TO-220-3

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