onsemi-IMD10AMT1G - Transistors - Bipolar (BJT) - Arrays, Pre-Biased Product Specifications and Latest Quotes

Transistor Type:	1 NPN, 1 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max):	500mA
Voltage - Collector Emitter Breakdown (Max):	50V
Resistor - Base (R1):	13kOhms, 130Ohms
Resistor - Emitter Base (R2):	10kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce:	100 @ 1mA, 5V / 68 @ 100mA, 5V
Vce Saturation (Max) @ Ib, Ic:	300mV @ 1mA, 10mA
Current - Collector Cutoff (Max):	500nA
Frequency - Transition:	-
Power - Max:	285mW
Mounting Type:	Surface Mount
Package / Case:	SC-74, SOT-457
Supplier Device Package:	SC-74R

onsemi IMD10AMT1G