HUFA76645P3
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onsemi HUFA76645P3

Manufacturer No:
HUFA76645P3
Manufacturer:
onsemi
Package:
Tube
Datasheet:
HUFA76645P3 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 100V 75A TO220-3
Delivery:
Payment:
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:75A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:14mOhm @ 75A, 10V
Vgs(th) (Max) @ Id:3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:153 nC @ 10 V
Vgs (Max):±16V
Input Capacitance (Ciss) (Max) @ Vds:4400 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):310W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220-3
Package / Case:TO-220-3
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Similar Products

Part Number HUFA76645P3 HUFA75645P3   HUFA76445P3  
Manufacturer onsemi Fairchild Semiconductor Fairchild Semiconductor
Product Status Obsolete Obsolete Obsolete
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V 100 V 60 V
Current - Continuous Drain (Id) @ 25°C 75A (Tc) 75A (Tc) 75A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 14mOhm @ 75A, 10V 14mOhm @ 75A, 10V 6.5mOhm @ 75A, 10V
Vgs(th) (Max) @ Id 3V @ 250µA 4V @ 250µA 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 153 nC @ 10 V 238 nC @ 20 V 150 nC @ 10 V
Vgs (Max) ±16V ±20V ±16V
Input Capacitance (Ciss) (Max) @ Vds 4400 pF @ 25 V 3790 pF @ 25 V 4965 pF @ 25 V
FET Feature - - -
Power Dissipation (Max) 310W (Tc) 310W (Tc) 310W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Through Hole Through Hole Through Hole
Supplier Device Package TO-220-3 TO-220-3 TO-220-3
Package / Case TO-220-3 TO-220-3 TO-220-3

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