HUFA76429D3
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Manufacturer No:
HUFA76429D3
Manufacturer:
onsemi
Package:
Tube
Datasheet:
HUFA76429D3 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 60V 20A IPAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:20A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:23mOhm @ 20A, 10V
Vgs(th) (Max) @ Id:3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:46 nC @ 10 V
Vgs (Max):±16V
Input Capacitance (Ciss) (Max) @ Vds:1480 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):110W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:I-PAK
Package / Case:TO-251-3 Short Leads, IPak, TO-251AA
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Similar Products

Part Number HUFA76429D3 HUFA76429D3S   HUFA76429P3   HUFA76629D3   HUFA76409D3   HUFA76419D3   HUFA76423D3  
Manufacturer onsemi Fairchild Semiconductor Fairchild Semiconductor onsemi onsemi onsemi onsemi
Product Status Last Time Buy Obsolete Obsolete Obsolete Obsolete Obsolete Obsolete
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 60 V 60 V 100 V 60 V 60 V 60 V
Current - Continuous Drain (Id) @ 25°C 20A (Tc) 20A (Tc) 47A (Tc) 20A (Tc) 18A (Tc) 20A (Tc) 20A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 23mOhm @ 20A, 10V 23mOhm @ 20A, 10V 22mOhm @ 47A, 10V 52mOhm @ 20A, 10V 63mOhm @ 18A, 10V 37mOhm @ 20A, 10V 32mOhm @ 20A, 10V
Vgs(th) (Max) @ Id 3V @ 250µA 3V @ 250µA 3V @ 250µA 3V @ 250µA 3V @ 250µA 3V @ 250µA 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 46 nC @ 10 V 46 nC @ 10 V 46 nC @ 10 V 46 nC @ 10 V 15 nC @ 10 V 27.5 nC @ 10 V 34 nC @ 10 V
Vgs (Max) ±16V ±16V ±16V ±16V ±16V ±16V ±16V
Input Capacitance (Ciss) (Max) @ Vds 1480 pF @ 25 V 1480 pF @ 25 V 1480 pF @ 25 V 1285 pF @ 25 V 485 pF @ 25 V 900 pF @ 25 V 1060 pF @ 25 V
FET Feature - - - - - - -
Power Dissipation (Max) 110W (Tc) 110W (Tc) 110W (Tc) 110W (Tc) 49W (Tc) 75W (Tc) 85W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Through Hole Surface Mount Through Hole Through Hole Through Hole Through Hole Through Hole
Supplier Device Package I-PAK TO-252, (D-Pak) TO-220-3 I-PAK I-PAK I-PAK I-PAK
Package / Case TO-251-3 Short Leads, IPak, TO-251AA TO-252-3, DPak (2 Leads + Tab), SC-63 TO-220-3 TO-251-3 Short Leads, IPak, TO-251AA TO-251-3 Short Leads, IPak, TO-251AA TO-251-3 Short Leads, IPak, TO-251AA TO-251-3 Short Leads, IPak, TO-251AA

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