HUF76407D3ST
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onsemi HUF76407D3ST

Manufacturer No:
HUF76407D3ST
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Datasheet:
HUF76407D3ST Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 60V 12A DPAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:- 
Technology:- 
Drain to Source Voltage (Vdss):- 
Current - Continuous Drain (Id) @ 25°C:- 
Drive Voltage (Max Rds On, Min Rds On):- 
Rds On (Max) @ Id, Vgs:- 
Vgs(th) (Max) @ Id:- 
Gate Charge (Qg) (Max) @ Vgs:- 
Vgs (Max):- 
Input Capacitance (Ciss) (Max) @ Vds:- 
FET Feature:- 
Power Dissipation (Max):- 
Operating Temperature:- 
Mounting Type:- 
Supplier Device Package:- 
Package / Case:- 
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In Stock

$0.49
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Similar Products

Part Number HUF76407D3ST HUF76409D3ST   HUF76107D3ST   HUF76407D3S  
Manufacturer onsemi Fairchild Semiconductor Fairchild Semiconductor Fairchild Semiconductor
Product Status Active Active Active Obsolete
FET Type - N-Channel N-Channel N-Channel
Technology - MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) - 60 V 30 V 60 V
Current - Continuous Drain (Id) @ 25°C - 18A (Tc) 20A (Tc) 12A (Tc)
Drive Voltage (Max Rds On, Min Rds On) - 4.5V, 10V 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs - 63mOhm @ 18A, 10V 52mOhm @ 20A, 10V 92mOhm @ 13A, 10V
Vgs(th) (Max) @ Id - 3V @ 250µA 3V @ 250µA 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs - 15 nC @ 10 V 10.3 nC @ 10 V 11.3 nC @ 10 V
Vgs (Max) - ±16V ±20V ±16V
Input Capacitance (Ciss) (Max) @ Vds - 485 pF @ 25 V 315 pF @ 25 V 350 pF @ 25 V
FET Feature - - - -
Power Dissipation (Max) - 49W (Tc) 35W (Tc) 38W (Tc)
Operating Temperature - -55°C ~ 175°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type - Surface Mount Surface Mount Surface Mount
Supplier Device Package - TO-252-3 (DPAK) TO-252, (D-Pak) TO-252, (D-Pak)
Package / Case - TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63

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