onsemi-HGTP7N60A4-F102 - Transistors - IGBTs - Single Product Specifications and Latest Quotes

IGBT Type:	-
Voltage - Collector Emitter Breakdown (Max):	600 V
Current - Collector (Ic) (Max):	34 A
Current - Collector Pulsed (Icm):	56 A
Vce(on) (Max) @ Vge, Ic:	2.7V @ 15V, 7A
Power - Max:	125 W
Switching Energy:	55µJ (on), 150µJ (off)
Input Type:	Standard
Gate Charge:	60 nC
Td (on/off) @ 25°C:	11ns/100ns
Test Condition:	390V, 7A, 25Ohm, 15V
Reverse Recovery Time (trr):	-
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Through Hole
Package / Case:	TO-220-3
Supplier Device Package:	TO-220-3

onsemi HGTP7N60A4-F102