onsemi-HGTP10N120BN - Transistors - IGBTs - Single Product Specifications and Latest Quotes

IGBT Type:	NPT
Voltage - Collector Emitter Breakdown (Max):	1200 V
Current - Collector (Ic) (Max):	35 A
Current - Collector Pulsed (Icm):	80 A
Vce(on) (Max) @ Vge, Ic:	2.7V @ 15V, 10A
Power - Max:	298 W
Switching Energy:	320µJ (on), 800µJ (off)
Input Type:	Standard
Gate Charge:	100 nC
Td (on/off) @ 25°C:	23ns/165ns
Test Condition:	960V, 10A, 10Ohm, 15V
Reverse Recovery Time (trr):	-
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Through Hole
Package / Case:	TO-220-3
Supplier Device Package:	TO-220-3

onsemi HGTP10N120BN