onsemi-HGTG12N60B3 - Transistors - IGBTs - Single Product Specifications and Latest Quotes

IGBT Type:	-
Voltage - Collector Emitter Breakdown (Max):	600 V
Current - Collector (Ic) (Max):	27 A
Current - Collector Pulsed (Icm):	110 A
Vce(on) (Max) @ Vge, Ic:	2.1V @ 15V, 12A
Power - Max:	104 W
Switching Energy:	150µJ (on), 250µJ (off)
Input Type:	Standard
Gate Charge:	51 nC
Td (on/off) @ 25°C:	26ns/150ns
Test Condition:	480V, 12A, 25Ohm, 15V
Reverse Recovery Time (trr):	-
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Through Hole
Package / Case:	TO-247-3
Supplier Device Package:	TO-247-3

onsemi HGTG12N60B3