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Part Number | HGTG10N120BND | HGTG18N120BND |
---|---|---|
Manufacturer | onsemi | onsemi |
Product Status | Last Time Buy | Obsolete |
IGBT Type | NPT | NPT |
Voltage - Collector Emitter Breakdown (Max) | 1200 V | 1200 V |
Current - Collector (Ic) (Max) | 35 A | 54 A |
Current - Collector Pulsed (Icm) | 80 A | 160 A |
Vce(on) (Max) @ Vge, Ic | 2.7V @ 15V, 10A | 2.7V @ 15V, 18A |
Power - Max | 298 W | 390 W |
Switching Energy | 850µJ (on), 800µJ (off) | 1.9mJ (on), 1.8mJ (off) |
Input Type | Standard | Standard |
Gate Charge | 100 nC | 165 nC |
Td (on/off) @ 25°C | 23ns/165ns | 23ns/170ns |
Test Condition | 960V, 10A, 10Ohm, 15V | 960V, 18A, 3Ohm, 15V |
Reverse Recovery Time (trr) | 70 ns | 75 ns |
Operating Temperature | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole | Through Hole |
Package / Case | TO-247-3 | TO-247-3 |
Supplier Device Package | TO-247-3 | TO-247-3 |