onsemi-HGTD1N120BNS9A - Transistors - IGBTs - Single Product Specifications and Latest Quotes

IGBT Type:	NPT
Voltage - Collector Emitter Breakdown (Max):	1200 V
Current - Collector (Ic) (Max):	5.3 A
Current - Collector Pulsed (Icm):	6 A
Vce(on) (Max) @ Vge, Ic:	2.9V @ 15V, 1A
Power - Max:	60 W
Switching Energy:	70µJ (on), 90µJ (off)
Input Type:	Standard
Gate Charge:	14 nC
Td (on/off) @ 25°C:	15ns/67ns
Test Condition:	960V, 1A, 82Ohm, 15V
Reverse Recovery Time (trr):	-
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package:	TO-252AA

onsemi HGTD1N120BNS9A