onsemi-HGT1S20N60A4S9A - Transistors - IGBTs - Single Product Specifications and Latest Quotes

IGBT Type:	-
Voltage - Collector Emitter Breakdown (Max):	600 V
Current - Collector (Ic) (Max):	70 A
Current - Collector Pulsed (Icm):	280 A
Vce(on) (Max) @ Vge, Ic:	2.7V @ 15V, 20A
Power - Max:	290 W
Switching Energy:	105µJ (on), 150µJ (off)
Input Type:	Standard
Gate Charge:	142 nC
Td (on/off) @ 25°C:	15ns/73ns
Test Condition:	390V, 20A, 3Ohm, 15V
Reverse Recovery Time (trr):	-
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package:	D²PAK (TO-263)

onsemi HGT1S20N60A4S9A