onsemi-HGT1S12N60A4S9A - Transistors - IGBTs - Single Product Specifications and Latest Quotes

IGBT Type:	-
Voltage - Collector Emitter Breakdown (Max):	600 V
Current - Collector (Ic) (Max):	54 A
Current - Collector Pulsed (Icm):	96 A
Vce(on) (Max) @ Vge, Ic:	2.7V @ 15V, 12A
Power - Max:	167 W
Switching Energy:	55µJ (on), 50µJ (off)
Input Type:	Standard
Gate Charge:	78 nC
Td (on/off) @ 25°C:	17ns/96ns
Test Condition:	390V, 12A, 10Ohm, 15V
Reverse Recovery Time (trr):	-
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package:	D²PAK (TO-263)

onsemi HGT1S12N60A4S9A